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TC58BVG0S3HBAI4 IC FLASH 1GBIT PARALLEL 63TFBGA Kioxia America, Inc.

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TC58BVG0S3HBAI4 IC FLASH 1GBIT PARALLEL 63TFBGA Kioxia America, Inc.

Name: TC58BVG0S3HBAI4 IC FLASH 1GBIT PARALLEL 63TFBGA Kioxia America Inc
Brand: Kioxia America, Inc.
Price: 1 USD

Brand Name : Kioxia America, Inc.

Model Number : TC58BVG0S3HBAI4

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Non-Volatile

Memory Format : FLASH

Technology : FLASH - NAND (SLC)

Memory Size : 1Gbit

Memory Organization : 128M x 8

Memory Interface : Parallel

Clock Frequency : -

Write Cycle Time - Word, Page : 25ns

Access Time : 25 ns

Voltage - Supply : 2.7V ~ 3.6V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 63-VFBGA

Supplier Device Package : 63-TFBGA (9x11)

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Product Details

85 ºC, High Ripple, General Purpose Capacitor

Type TC is an axial leaded, 85 ºC, 1000 hour long life general purpose aluminum electrolytic capacitor with a high ripple current rating and is suitable for consumer electronic equipment applications.

Highlights

• General purpose
• High ripple current
• Low profile mounting

Specifications

Attribute	Attribute Value
Manufacturer	Toshiba Semiconductor and Storage
Product Category	Memory ICs
Series	Benand™
Packaging	Tray
Package-Case	63-VFBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	2.7 V ~ 3.6 V
Supplier-Device-Package	63-TFBGA (9x11)
Memory Capacity	1G (128M x 8)
Memory-Type	EEPROM - NAND
Speed	25ns
Format-Memory	EEPROMs - Serial

Descriptions

FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parallel 25ns 63-TFBGA (9x11)

SLC NAND Flash Parallel 3.3V 1G-bit

EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM

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